The igbt can switch at moderately high frequency igbt module wear out failure mechanisms, such as bond wire fatigue, aluminum reconstruction, substrate cracking, interconnections corrosion, and solder fatigue and voids, while igbt catastrophic failure is not discussed in detail except for the mechanism of latch up. Is it possible to have latchup in a single mosfet package. The body spreading resistance in the igbt is reduced by making body region heavily doped. Driver cores from the skhi and skyper family can be optimized using adapter boards for each module type. A step by step methodology to analyze the igbt failure. White paper fourthgeneration field stop igbt with high. The latch up immunity was evaluated under static and dynamic conditions, as shown in figures 5 and 6 respectively. Analysis of the dynamic characteristics of a power semiconductor module. Drivers are available to cover a large selection of highpower and high voltage igbt modules with reverse voltages from 600 v to 6500 v. Plugandplay drivers plugandplay products are complete, readytouse igbt drivers that have been tightlymatched to a specific igbt module.
Internal or personal use of this material is permitted. How advanced igbt gate drivers simplify highvoltage, high. How to reduce body spreading resistance in the igbt. How the igbt insulated gate bipolar transistor latch up.
Igbt improves dynamic performance and efficiency and reduced the level of audible noise. More specifically it is the inadvertent creation of a lowimpedance path between the power supply rails of a mosfet circuit. Catastrophic failure and fault9tolerant design of igbt power. A latchup is a type of short circuit which can occur in an integrated circuit ic. Dynamic avalanche behavior of power mosfets and igbts under unclamped inductive switching conditions. Figure 5 shows that the maximum static saturation current is around 4000acm2 with no latch up occurring. Drivers such as the skyper prime offer a fully qualified. Failure mechanisms of insulated gate bipolar transistors. Igbts are the ideal choice with switching frequencies of 1khz150khz and current handling of up to. Igbt improves dynamic performance and efficiency and reduced the.
Insulated gate bipolar transistors igbts are a difficult problem for tcad engineers. A latch up is a type of short circuit which can occur in an integrated circuit ic. If the parasitic trace resistance r1 is large enough, the ground of the inverter can be at a higher potential than the input signal. Halfbridge igbt modules latchup failure was observed by a switching test. Galvanic isolated gate driver infineon technologies. By considering a 2d dimensional physically based device simulation, and by analyzing. An6076 design and application guide of bootstrap circuit for high.
Products of non latch up igbts were first commercialized by toshiba in 1985. The main cause of this is the change in load current dildt. Power electronics systems are commonly used in motor drive, power supply and power conversion. When the igbt is switched off, the depletion layer of the ndrift p body junction j2 is abruptly extended, and the igbt latches up at a current lower than 12 of the static latch up current due to the displacement current. Kolar this material is published in order to provide access to research results of the power electronic systems laboratory ditet eth zurich. Pdf latchup failure is one of the most important failure. A systematic methodology is developed in order to clarify the punch through trench insulated gate bipolar transistor t igbt failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. Opencircuit can also be due to absence of gate drive signal. If this rb is not adequately reduced, dynamic latching could occur at turnoff.
In a previous study, we have argued that the modified structure shows a superior static latch up performance at high operating temperatures. The dynamic latch up process in conventional and modified lateral insulated gate bipolar transistor ligbt structures is studied in this paper. Igbt fwdpower bridges and fully integrated gate drivers with driving and monitoring functions replacing conventional hybrid igbt drivers are restricted to low power applications 600v, 1200v. To avoid dynamic latch up, to be discussed later the gate emitter voltage of an igbt is maintained at a negative value when the device. Non latch up igbt operation was ensured, for the first time, for the entire device operation range.
Power integrations dynamic advanced active clamping allows an extended dclink voltage range in igbt offstate for up. Igbts have a higher gain than do mosfets, resulting in more shortcircuit current for a given gate voltage. To develop the medium power market for currents up to 100a or even higher the extension of the gate driver ic performance is necessary. With a range spanning from single to halfbridge and multiplechannel drivers rated for either low or highvoltage up to 1500 v applications, st also offers galvanicallyisolated gate driver ics for safety and functional requirements, systeminpackage sip solutions integrating high and lowside gate drivers and mosfetbased power stages. The first circuit shows an nchannel power mosfet driving a wide base pnp. These transistors signify the parasitic thyristor which creates a regenerative feedback loop. Figure 7 shows latchup case that the highside output does not changed by. Primary failure modes associated with igbt latchup faults are. Latchup protection for mosfet drivers microchip technology inc. But this will increase the size of the device so fabs give a minimum space to put a tap.
Insulated gate bipolar transistor igbt basics ixys corporation. A fast overcurrent protection scheme for igbt modules. Dynamic latchup in advanced ligbt structures at high. Semikron offers two different igbt driver families for any application. The rb resistor signifies the shorting of the baseemitter terminals of the npn transistor to ensure that the thyristor doesnt latch up, that will lead to the igbt latch up. This is actually what limits the soa of an igbt since the dynamic latch up current is lower than the static one mosfet section turns off and the depletion region of junction bodydrift expands into n layer, the base region of the pnp bjt. Dynamic avalanche can be selfinduced if the gate resistance is too low. Galvanic isolated gate driver ics for mosfets, igbts, igbt modules, sic mosfets and gan hemts perfect for industrial and automotive applications. Dynamic switching test technology for igbt chip under high. The latchup tj is not always 255c due to difference in current.
Failure rate is calculated by multiplying a base failure rate with several conditional factors. The bootstrap circuit is useful in a highvoltage gate driver and operates as follows. On semiconductor amplia lofferta di igbt e gate driver. Robust design with major power discrete technologies. Analog devices small form factor isolated gate drivers are designed for the higher switching speeds and system size constraints required by power switch technologies such as sic silicon carbide and gan gallium nitride, while still providing reliable control over switching characteristics for igbt insulated gate bipolar transistor and mosfet. Also to avoid the latch, a separate tap connection is put for each transistor. In the first faulttolerant motor drive reported by janhs. The pwm source outputs a low signal to the inverter, which turns on the mosfet. It is equally suitable in resonantmode converter circuits. Unfortunately, under dynamic conditions when the igbt is switching from on to off, it may latch up at drain current values less than the static current value. Closedloop igbt gate drive featuring highly dynamic dldt and dvdt control y. The igbt as an optimal candidate as a power switch for applications requires high current, high voltage and high temperature operation 1, nevertheless, one of the most important drawbacks of igbts is the latch up to the inherent parasitic thyristor structure, which leads to the gate control loss of the collector current and failure caused by.
Closedloop igbt gate drive featuring highly dynamic dldt. Low driving power and a simple drive circuit due to the input mos gate structure. This is dynamic latchup, which is actually what limits the safe. A fast overcurrent protection scheme for igbt modules through dynamic fault current evaluation zhiqiang wang1, xiaojie shi1, leon m. Dynamic switching test technology for igbt chip under high power operating condition. These gate charge dynamic input characteristics show the electric load necessary to. An igbt is more prone to latch up because it has a fourlayer structure, and this may also restrict the device safe operating area. How the dynamic latch up of the parasitic thyristor in the igbt avoided. Infineon provides a broad spectrum of solutions for reliable and efficient controls. Although designed for driving discrete and module igbts, this device offers a. It consists of three terminals with a vast range of bipolar current carrying capacity. This paper describes the design and implementation of a driver that allows an igbt module rated at 800 a3300 v to switch up to 3000 a at 2200 v in. Department of electrical engineering and computer science. Latchup of parasitic thyristor in igbt insulated gate.
Since an igbt has a mos gate structure, to charge and discharge this gate when switching, it is. Located in stoughton, ma, we are committed to delivering innovative. The physical operation of these devices combines both that of a cmos mosfet and that of a bipolar transistor. Fourthgeneration field stop igbt with highperformance and enhanced latch up immunity. Mc33153 single igbt gate driver the mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Latching overview levelsensitive design dynamic latches l faster l less area l required to function at 110th speed general purpose library l fully characterized l emphasis on speed 1996 vlsi circuits workshop dynamic logic and latches part ii latching latch implementation i. Adding the parameter lambda50m or there abouts to the vdmos model would add. Advanced soi gate driver ic with integrated v monitoring. Analysis of the latchup process and current filamentation. This is dynamic latchup, which is actually what limits the safe operating area. Consider the igbt embedded in a stepdown converter circuit. The term igbt is a semiconductor device and the acronym of the igbt is insulated gate bipolar transistor. Home knowledge white papers fourthgeneration field stop igbt with highperformance and enhanced latch up immunity.
Simple circuit techniques and attention to system design details will ensure that the cmos full potential can be realized in all operating environments. Pdf sem investigation on igbt latchup failure researchgate. Igbt module wear out failure mechanisms, such as bond wire fatigue, aluminum reconstruction, substrate cracking, interconnections corrosion, and solder fatigue and voids, while igbt catastrophic failure is not discussed in detail except for the mechanism of latch up. Due to the feedback effect of the emitter stray inductance. Latchup is the low resistance connection between tub clarification needed and power supply rails. Insulated gate bipolar transistor igbt interview question answer 2 1. Turnoff time as a precursor for gate bipolar transistor latchup.
Our integrated circuits, igbt drivers, and diodes enable compact, energyefficient acdc power supplies for a vast range of electronic products including mobile devices, tvs, pcs, appliances, led lights, smart utility meters, traction motors, dc. Dynamic latch up is associated with a high dvdt at turnoff. Application note an983 igbt characteristics table of contents. In this sense, the non latch up igbt proposed by hans w.
All the explanation images have 2 mosfets next to each other and the latchup comes from their interaction through the substrate. Igbt gate driver solutions for low and medium power applications 18 igbt drivers. No formula was provided for igbt, therefore a mosfet and bipolar junction transistor bjt was modeled in series to represent an igbt. Insulated gate bipolar transistor igbt basics abdus sattar, ixys corporation 1 ixan0063. But this will increase the size of the device so fabs give a minimum space to put a tap, for example, 10.
Pdf dynamic avalanche behavior of power mosfets and. In particular, for the dynamic latch up characteristics shown in figure 6, the proposed fs igbt. The power losses, the switching times and the efforts for the driving circuits are investigated. More specifically it is the inadvertent creation of a lowimpedance path between the. The designers of the igbt think that it is a voltage controlled bipolar. Aalborg universitet catastrophic failure and fault. Enhanced level of protection is provided by implemented shortcircuit monitoring. A possibility for a latchup mitigation is the latchup protection technology circuit. When a latchup is detected, the lpt circuit shuts down the chip and holds it powereddown for a preset time.
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